• EE SX4767 2 2
  • EE SX4767 3 1
  • EE SX4767 5 1
  • EE SX4767 4 1
  • EE SX4767 1 1
  • EE SX4767 2 2
  • EE SX4767 3 1
  • EE SX4767 5 1
  • EE SX4767 4 1
  • EE SX4767 1 1

Omron Photomicro sensors EE-SPY302 EE-SPY301/-SPY401 EE-SPY402 EE-SPX301/-SPX401

Series#: Omron Photomicro sensors

Product Details

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Specification

Sensing method Through-beam type (with slot) Reflective type
Models EE-SPX301, EE-SPX401 EE-SPY301, EE-SPY401
EE-SPY302, EE-SPY402
Sensing distance 3.6 mm (slot width) 5 mm (Reflection factor: 90%; white paper
15 × 15 mm) *1
Sensing object Opaque: 1 × 0.5 mm min.
Differential distance 0.05 mm max. 0.2 mm max.
(with a sensing distance of 3 mm, horizontally)
Light source GaAs infrared LED with a peak wavelength of 940 nm
Indicator *2 Light indicator (red)
Supply voltage 5 to 24 VDC ±10%, ripple (p-p): 5% max.
Current consumption Average: 15 mA max., Peak: 50 mA max.
Control output NPN voltage output:
Load power supply voltage: 5 to 24 VDC
Load current: 80 mA max.
OFF current: 0.5 mA max.
80 mA load current with a residual voltage of 1.0 V max.
10 mA load current with a residual voltage of 0.4 V max.
Response frequency *3 500 Hz min. 100 Hz min.
Ambient illumination 3,000 lx max. with incandescent light or sunlight on the surface of the receiver
Ambient temperature
range
Operating: – 10 to +55 ° C
Storage: – 25 to +65 ° C (with no icing)
Ambient humidity range Operating: 5% to 85%
Storage: 5% to 95% (with no condensation)
Vibration resistance Destruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 h each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree of protection IEC IP50
Connecting method Special connector (soldering not possible)
Weight Approx. 2.6 g
Material Case Polycarbonate

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