Type | Standard | L-shaped | T-shaped |
NPN models | EE-SX770/EE-SX870 EE-SX770A/EE-SX870A |
EE-SX771/EE-SX871 EE-SX771A/EE-SX871A |
EE-SX772/EE-SX872 EE-SX772A/EE-SX872A |
PNP models | EE-SX770P/EE-SX870P EE-SX770R/EE-SX870R |
EE-SX771P/EE-SX871P EE-SX771R/EE-SX871R |
EE-SX772P/EE-SX872P EE-SX772R/EE-SX872R |
Sensing distance | 5 mm (slot width) | ||
Sensing object | Opaque: 2 × 0.8 mm min. | ||
Differential distance | 0.025 mm | ||
Light source | GaAs infrared LED with a peak wavelength of 940 nm | ||
Indicator | Light indicator (red) (turns ON when light is interrupted for models with A or R suffix) | ||
Supply voltage | 5 to 24 VDC ±10%, ripple (p-p): 10% max. | ||
Current consumption | 35 mA max. (NPN models), 30 mA max. (PNP models) | ||
Control output | NPN open collector: 5 to 24 VDC, 100 mA max. 100 mA load current with a residual voltage of 0.8 V max. 40 mA load current with a residual voltage of 0.4 V max. OFF current (leakage current): 0.5 mA max. PNP open collector: 5 to 24 VDC, 50 mA max. 50 mA load current with a residual voltage of 1.3 V max. OFF current (leakage current): 0.5 mA max. |
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Response frequency * | 1 kHz min. (3 kHz average) | ||
Ambient illumination | 1,000 lx max. with fluorescent light on the surface of the receiver | ||
Ambient temperature range | Operating: – 25 to +55 ° C Storage: – 30 to +80 ° C (with no icing) |
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Ambient humidity range | Operating: 5% to 85% Storage: 5% to 95% (with no condensation) |
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Vibration resistance | Destruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2) 1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions |
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Shock resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions | ||
Degree of protection | IEC60529 IP60 | ||
Connecting method | Pre-wired (standard cable length: 2 m) | ||
Weight (packaged) | Approx. 20 g | ||
Material | Case: Polybutylene phthalate (PBT) |