| Item |
Specifications |
Condition |
| Product Name |
PA-N relay |
PhotoMOS Power type (Voltage sensitive type) |
| Part No. |
APAN3112, APAN3124 |
AQZ10*D (DC only) |
AQZ20*D (AC/DC dual use) |
| Between input and output |
2,000 Vrms |
for 1 min. |
| Between different terminals (between relays, both ways) |
1,500 Vrms |
for 1 min. |
| Insulation resistance (Initial) |
Min. 100 MΩ (Measurement at same location as “Breakdown voltage” section.) |
Using 500 V DC megger |
| Vibration resistance Destructive |
10 to 55 Hz at double amplitude 1 mm .039 inch |
In vertical, horizontal and longitudinal directions |
| Vibration resistance Functional |
10 to 55 Hz at double amplitude 1 mm .039 inch |
In vertical, horizontal and longitudinal directions |
| Shock resistance Destructive |
Min. 196 m/s2 |
In vertical, horizontal and longitudinal directions |
| Shock resistance Functional |
Min. 98 m/s2 |
In vertical, horizontal and longitudinal directions |
| Ambient temperature |
–20 to +55°C –4 to +131°F |
Not freezing and condensing |
| Ambient humidity |
35 to 85% R.H. |
Not condensing |
| Storage temperature |
–30 to +80°C –22 to +176°F |
Not freezing and condensing |
| Terminal screw fasten torque |
0.3 to 0.5 N·m |
|
| Coil surge absorber |
Diode (1A, 400V) |
|
| Cross connection protecting diode |
1 A, inverse voltage 400 V |
|
| Unit weight |
Approx. 100 g 3.53 oz |
|
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