Item | Specifications | Condition | |
Product Name | PA-N relay | PhotoMOS Power type (Voltage sensitive type) | |
Part No. | APAN3112, APAN3124,APAN3105 | AQZ10*D (DC only) | AQZ20*D (AC/DC dual use) |
Between input and output | 2,000 Vrms | for 1 min. | |
Between different terminals (between relays, both ways) | 1,500 Vrms | for 1 min. | |
Insulation resistance (Initial) | Min. 100 MΩ (Measurement at same location as “Breakdown voltage” section.) | Using 500 V DC megger | |
Vibration resistance Destructive | 10 to 55 Hz at double amplitude 1 mm .039 inch | In vertical, horizontal and longitudinal directions | |
Vibration resistance Functional | 10 to 55 Hz at double amplitude 1 mm .039 inch | In vertical, horizontal and longitudinal directions | |
Shock resistance Destructive | Min. 196 m/s2 | In vertical, horizontal and longitudinal directions | |
Shock resistance Functional | Min. 98 m/s2 | In vertical, horizontal and longitudinal directions | |
Ambient temperature | –20 to +55°C –4 to +131°F | Not freezing and condensing | |
Ambient humidity | 35 to 85% R.H. | Not condensing | |
Storage temperature | –30 to +80°C –22 to +176°F | Not freezing and condensing | |
Terminal screw fasten torque | 0.3 to 0.5 N·m | ||
Coil surge absorber | Diode (1A, 400V) | ||
Cross connection protecting diode | 1 A, inverse voltage 400 V | ||
Unit weight | Approx. 100 g 3.53 oz |